Three-Dimensional Integration of InAs Nanowires by Template-Assisted Selective Epitaxy on Tungsten
3D integration of III-V semiconductors with Si CMOS is highly attractive since it allows combining new functions such as photonic and analog devices with digital signal processing circuitry. Thus far, most 3D integration approaches have used epitaxial growth on Si, layer transfer by wafer bonding, or die-to-die packaging. Here we present low-temperature integration of InAs on W using Si3N4 templat